Open AccessTheoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors
Author(s) -
Li Dl,
YP Zeng
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.3677
Subject(s) - electron , high electron mobility transistor , fermi gas , channel (broadcasting) , materials science , transistor , electron mobility , induced high electron mobility transistor , condensed matter physics , distribution (mathematics) , physics , optoelectronics , computer science , telecommunications , quantum mechanics , voltage , mathematical analysis , mathematics
The principle of high-electron-mobility transistor (HEMT) and the property of two-dimensional electron gas (2DEG) have been analyzed theoretically. The concentration and distribution of 2DEG in various channel layers are calculated by numerical method. Variation of 2DEG concentration in different subband of the quantum well is discussed in detail. Calculated results show that sheet electron concentration of 2DEG in the channel is affected slightly by the thickness of the channel. But the proportion of electrons inhabited in different subbands can be affected by the thickness of the channel. When the size of channel lies between 20—25 nm, the number of electrons occupying the second subband reaches the maximum. This result can be used in parameter design of materials and devices.