Open Access2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects
Author(s) -
Yanping Li,
Jing-Ping Xu,
Weibing Chen,
Xu Sheng-Guo,
Feng Jiang
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.3670
Subject(s) - threshold voltage , mosfet , poisson's equation , quantum , physics , poisson distribution , voltage , short channel effect , schrödinger equation , channel length modulation , channel (broadcasting) , dielectric , materials science , statistical physics , computational physics , quantum mechanics , transistor , mathematics , computer science , telecommunications , statistics
A threshold condition different from the classical one is proposed for MOSFET with quantum effects, by means of self-consistent numerical solution of the Schrdinger's and Poisson's equations, and thus an accurate 1-D threshold-voltage model is obtained with good agreements between simulated results and measurement data. Based on this 1-D model, an accurate 2-D quantum-modified threshold-voltage model for small-scale MOSFET is developed by solving the quasi-2D Poisson's equation and taking short-channel effects and quantum-mechanical effects into consideration. The model can also be used for simulation of electrical properties and design of structural parameters for deep-submicron MOSFETs with high-k materials as gate dielectric.