Open AccessStudy of the modulated spectra of dilute GaNxAs1－x (x≤0.03) thin films
Author(s) -
Chong Wang,
Pingping Chen,
Zhaolin Liu,
Tianxin Li,
Chao Xia,
Xiaoshuang Chen,
Wei Lü
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.3636
Subject(s) - materials science , spectral line , thin film , valence band , doping , valence (chemistry) , molecular beam epitaxy , reflectivity , condensed matter physics , optics , band gap , epitaxy , optoelectronics , nanotechnology , physics , layer (electronics) , quantum mechanics , astronomy
Dilute GaNxAs1-x thin films with N concentration from 0.0% to 3% have been grown by molecular beam epitaxy. Piezomodulated reflectance (PzR) spectra of these thin films have been measured at room temperature, and optical transitions in PzR spectra have been well resolved. The N-related transition of E1+Δ1+ΔN had been observed in PzR spectrum of GaN0.005As0.995 and GaN0.01As0.99 films. The well resolved split between heavy hole and light hole of Γ valence band is shown in PzR when the N doping level is up to 1%. The N concentration dependence of transition energies supports the model that both E+ and E* originate from the L conductive band at room temperature.