Open AccessCurrent slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias
Author(s) -
Yue Hao,
Han Xin-Wei,
Jincheng Zhang,
Jinfeng Zhang
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.3622
Subject(s) - high electron mobility transistor , materials science , transistor , optoelectronics , gallium nitride , microwave , current (fluid) , polarization (electrochemistry) , slump , condensed matter physics , electrical engineering , physics , nanotechnology , composite material , voltage , computer science , thermodynamics , telecommunications , chemistry , engineering , layer (electronics) , cement
As the most remarkable effect in GaN microwave power device, Current slump has been studied widely.However,there still exist unsolved proplems.Based on the analysis of experiment and theory on the AlGaN/GaN high electron mobility transistor (HEMT) under dc sweep,an analytical model for the current collapse is developed considering the effects of polarization and surface states.The comparison between simulations and physical measurements shows a good agreement.