Open AccessA new method to grow high quality GaN film by MOCVD
Author(s) -
Peng Dong-sheng,
Feng Yang,
Wenxin Wang,
Xiaofeng Liu,
Wei Shi,
Hanben Niu
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.3606
Subject(s) - sapphire , metalorganic vapour phase epitaxy , materials science , epitaxy , substrate (aquarium) , crystal (programming language) , diffraction , scanning electron microscope , optoelectronics , etching (microfabrication) , chemical vapor deposition , optics , crystallography , laser , nanotechnology , chemistry , composite material , layer (electronics) , oceanography , physics , geology , computer science , programming language
Patterned c-plane sapphire substrate is prepared by chemical etching. GaN films are grown by LP-MOCVD on surface treated sapphire substrate and common c-plane sapphire substrate. The structure and properties of the GaN films are analyzed by high-resolution double crystal X-ray diffraction(DCXRD), scanning electron microscope(SEM) and atomic force microscope(AFM).The results indicate that the quality of GaN film grown on sapphire substrate prepared by surface treatment is superior to that grown on common c-plane sapphire substrate. High-resolution double crystal X-ray diffraction shows that for the GaN grown on surface treated sapphire substrate,the (0002) and (1012) reflections have full-width at half-maximum as low as 208.80arcsec and 320.76 acrsec, respectively. The shortcomings of procedure complexity and high crystallographic tilt in conventional lateral epitaxial overgrowth are overcome by using the new method.