Open AccessPreparation and mechanism of p-type ZnO films formed by modified ion beam enhanced deposition method
Author(s) -
Ningyi Yuan,
Jinhua Li,
Lining Fan,
Xiuqin Wang,
Jian Xie
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.3581
Subject(s) - materials science , crystallite , annealing (glass) , electrical resistivity and conductivity , deposition (geology) , ion beam , sputtering , thin film , ion beam assisted deposition , analytical chemistry (journal) , ion , chemical engineering , composite material , nanotechnology , metallurgy , chemistry , paleontology , organic chemistry , chromatography , sediment , electrical engineering , biology , engineering
In-N codoped ZnO films were prepared on Si and SiO2/Si substrates by modified ion beam enhanced deposition method. ZnO mixed with 2 atm % In2O3 powder was used as sputtering target and during the deposition N+/Ar+ mixed beam was implanted into the deposited films. The XRD results showed that all polycrystalline In-N codoped ZnO films deposited on Si and SiO2 substrates have a preferred (002) orientation and showed p-type conduction. The as-deposited films were annealed in N2 and O2. After annealed in N2 the lowest resistivity of p-type In-N codoped ZnO films was 0.9Ωcm. The dependence of film structure and electrical properties on deposition and annealing condition were discussed.