Open AccessMonte Carlo simulation of the SRAM single event upset
Author(s) -
Hua Li
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.3540
Subject(s) - static random access memory , single event upset , monte carlo method , chip , upset , neutron , event (particle physics) , process (computing) , computer science , nuclear physics , physics , computer hardware , statistics , mathematics , telecommunications , quantum mechanics , operating system
The process of deposited energy in sensitive volumes in a static random access memory (SRAM) chip induced by 10—20MeV neutrons is simulated using the Monte Carlo method. In the simulation, the physical parameters related to the single event upset (SEU) of the SRAM chip are calculated. The results provide detailed statistical data for the SEU process induced by 10—20MeV incident neutrons, and reference information for the deface reinforcement of the SRAM chip.