Open AccessImproved dielectric and ferroelectric characteristics of highly (111)-oriented Pb(Zr0.52Ti0.48)O3 films produced by sol-gel method
Author(s) -
Fengang Zheng,
Jianping Chen,
Xinwan Li
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.3067
Subject(s) - materials science , coercivity , ferroelectricity , dielectric , buffer (optical fiber) , hysteresis , sol gel , layer (electronics) , crystallization , spin coating , polarization (electrochemistry) , composite material , coating , condensed matter physics , optoelectronics , nanotechnology , chemical engineering , electrical engineering , chemistry , physics , engineering
Highly (111)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) films with a variety of PZT buffer layer thickness were prepared by spin coating on Pt/Ti/SiO2/Si substrates with Sol-Gel process. The thickness of PZT buffer layer was found to play a significant role on grain size and orientation of Pb(Zr0.52Ti0.48)O3 films. With the increasing of PZT buffer layer thickness, both crystallization and orientation were improved obviously. High dielectric constant (1278, 1kHz, for 28nm buffer), low dielectric loss (0.023, 1kHz, for 28nm buffer), symmetric C-V characteristics and P-E curves were obtained. Hysteresis measurements show that the remnant polarization and coercive field of the films reach 43μC·cm-2 and 78kV·cm-1, respectively.