Open AccessSubstrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS process
Author(s) -
Yi Zhao,
Wan Xing-Gong
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.3003
Subject(s) - time dependent gate oxide breakdown , gate oxide , materials science , oxide , substrate (aquarium) , optoelectronics , cmos , breakdown voltage , equivalent oxide thickness , metal gate , voltage , electrical engineering , transistor , metallurgy , oceanography , geology , engineering
V-ramp method was used to evaluate gate oxide reliability of 0.18μm dual gate CMOS process. Charge of breakdown (Qbd) and voltage of breakdown (Vbd) of gate oxide with n-type substrate and p-type substrate were extracted. It was found that for low voltage (thin oxide) gate oxide device the Qbd of gate oxide of n-type substrate and p-type substrate are almost the same, but for high voltage (thick oxide) gate oxide device the Qbd of n-type substrate and p-type substrate have a big difference. At the same time, Qbd of gate oxide with p-substrate is bigger than that of gate oxide with n-substrate. The difference of Qbd of thin gate oxide and thick gate oxide can be attributed to lithographic damage to the interface of poly-silicon gate and thick gate oxide. There is a big difference between the Weibull slopes of charge of breakdown of thin oxide and thick oxide. For the voltage of breakdown, Similar difference between n-substrate and p-substrate gate oxide was also observed. However, there is no big difference between the Weibull slopes of voltage of breakdown of thin oxide and thick oxide.