Open AccessExtraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET
Author(s) -
Gao Jin-Xia,
Yimen Zhang,
Xiaoyan Tang,
Yuming Zhang
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.2992
Subject(s) - mosfet , channel (broadcasting) , materials science , interface (matter) , extraction (chemistry) , distortion (music) , channel length modulation , optoelectronics , analytical chemistry (journal) , computer science , electrical engineering , transistor , telecommunications , composite material , chemistry , cmos , voltage , chromatography , engineering , amplifier , capillary number , capillary action
A theoretical and experimental study on extracting channel carrier concentration for 4H-SiC buried channel MOSFET has been carried out. The distortion of C-V curve caused by the existence of p-n junction in buried channel MOS structure would affect the extracting result, and the interface states on SiO2/SiC interface make extracting result deviate from true channel carrier concentration. In this paper, firstly, a theoretical analysis about the effects of channel depth and interface state on extracting result is made. Then the C-V curves for buried-channel MOS structure with two different channel depth are presented from which the channel carrier concentration is extracted. In the measurement of C-V curves, three different sweep velocities are used to analyze the effect of interface states. The theoretical results agree with experimental results.