Open AccessHigh-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD
Author(s) -
Qingxiang Zhao,
Pan Jq,
J Zhang,
Fengqun Zhou,
Wang Bj,
Li-Fang Wang,
Jinhu Bian,
Xiuli An,
Lei Zhao,
W Wang
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.2982
Subject(s) - metalorganic vapour phase epitaxy , materials science , chemical vapor deposition , full width at half maximum , photoluminescence , optoelectronics , quantum well , band gap , deposition (geology) , quality (philosophy) , optics , epitaxy , nanotechnology , laser , physics , layer (electronics) , paleontology , quantum mechanics , sediment , biology
High quality InGaAsP/InGaAsP multiple quantum wells (MQWs) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. A large bandgap energy shift of 46 nm and photoluminescence with FWHM less than 30 meV were obtained with a rather small mask width variation (15—30 μm). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks were employed, and the transition effect of the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length.