Open AccessDensity of defect states in low-k porous SiO2:F film researched by SCLC method
Author(s) -
Jing Gou,
ZW He,
GH Pan,
Wang Yy
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.2936
Subject(s) - materials science , dopant , porosity , doping , fermi level , surface states , density of states , fluorine , condensed matter physics , porous silicon , analytical chemistry (journal) , surface (topology) , optoelectronics , composite material , physics , chemistry , electron , chromatography , geometry , mathematics , quantum mechanics , metallurgy
The porous fluorine doped silica (SiO2:F) films were prepared by sol-gel method. The densities of the states (DOS) of the SiO2:F films and the effect of the dose of the F dopant were studied by space charge limited current(SCLC) techniques. Distribution of defect states N(E) in the vicinity of Fermi level in SiO2:F films was determined to be about 7×1015cm-3·eV-1. The dangling bounds on the surface of the porous film were the primary cause of the DOS.