Density of defect states in low-k porous SiO2:F film researched by SCLC method | Zendy

Jie Gou | Zendy; He Zhi-Wei | Zendy; Pan Guo-Hui | Zendy; Yinyue Wang | Zendy

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Density of defect states in low-k porous SiO2:F film researched by SCLC method

Author(s) -

Jie Gou,

He Zhi-Wei,

Pan Guo-Hui,

Yinyue Wang

Publication year - 2006

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.55.2936

Subject(s) - materials science , dopant , porosity , doping , fermi level , surface states , density of states , fluorine , condensed matter physics , porous silicon , analytical chemistry (journal) , surface (topology) , optoelectronics , composite material , physics , chemistry , electron , chromatography , geometry , mathematics , quantum mechanics , metallurgy

The porous fluorine doped silica (SiO2:F) films were prepared by sol-gel method. The densities of the states (DOS) of the SiO2:F films and the effect of the dose of the F dopant were studied by space charge limited current(SCLC) techniques. Distribution of defect states N(E) in the vicinity of Fermi level in SiO2:F films was determined to be about 7×1015cm-3·eV-1. The dangling bounds on the surface of the porous film were the primary cause of the DOS.

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