Open AccessFabrication of vanadium dioxide films at low temperature and researches on properties of the films
Author(s) -
Lixia Wang,
Jianping Li,
Xiaoliang He,
Xinliang Gao
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.2846
Subject(s) - materials science , partial pressure , annealing (glass) , vanadium oxide , electrical resistivity and conductivity , vanadium , fabrication , sputtering , microelectromechanical systems , thin film , oxygen , vanadium dioxide , atmospheric temperature range , oxide , microbolometer , analytical chemistry (journal) , chemical engineering , composite material , nanotechnology , metallurgy , bolometer , electrical engineering , thermodynamics , chemistry , alternative medicine , pathology , detector , engineering , chromatography , medicine , physics , organic chemistry
The vanadium oxide thin films are fabricated for microbolometer by radio frequency reactive sputtering at room temperature. The effects of the oxygen partial pressure on deposition rate, electrical properties and compositions of the films are discussed. Films consisting mainly of VO2 can be prepared by adjusting oxygen partial pressure. After oxidation annealing in air, the VO2 films with high temperature coefficients of resistivity (about -4%/℃) and low resistivity can be obtained. The square resistances of the films are in the range between 100 kΩ/squ to 300kΩ/squ. All films are deposited at room temperature and annealed at 400℃, which is compatible with MEMS (micro electromechanical systems) process.