Open Access10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth
Author(s) -
Qian Zhao,
Jiaoqing Pan,
Jing Zhang,
Zhou Guang-Tao,
Wu Jian,
Fan Zhou,
Baojun Wang,
Lufeng Wang,
Wei Wang
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.261
Subject(s) - materials science , extinction ratio , tandem , optoelectronics , laser , pulse width modulation , voltage , optics , wavelength , electrical engineering , physics , composite material , engineering
In this work, a novel light source of tandem InGaAsP/InGaAsP multiple quantum well electroabsoption modulator(EAM) monolithically integrated with distributed feedback laser is fabricated by ultra-low-pressure (22×Pa) selective area growth metal-organic chemical vapor diposition technique. Superior device performances have been obtained, such as low threshold current of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3dB bandwidth in EAM part is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained due to the gate operation effect of tandem EAMs.