Open AccessStudy on self-healing effect in ultra deep submicron PMOSFET’s
Author(s) -
Jing Li,
Hongxia Liu,
Yue Hao
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.2508
Subject(s) - passivation , materials science , threshold voltage , stress (linguistics) , hydrogen , self healing , optoelectronics , voltage , engineering physics , nanotechnology , electrical engineering , physics , transistor , medicine , engineering , linguistics , philosophy , alternative medicine , layer (electronics) , quantum mechanics , pathology
The NBTI effect is studied in this paper with emphasis on its self-healing phenomenon. The recovery of threshold voltage shift with stress times and recovery time are studied. It is found that the recovery is mainly related to the re-passivation by hydrogen of interface states that occurred after the stress is stopped.