Open AccessThe effect of biexciton, wetting layer leakage and Auger capture on Rabi oscillation damping in quantum dots
Author(s) -
ShaoDing Liu,
Mu-Tian Cheng,
Huijun Zhou,
Yaoyi Li,
QuQuan Wang,
Quan Xue
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.2122
Subject(s) - rabi cycle , biexciton , wetting layer , quantum dot , population , auger effect , atomic physics , oscillation (cell signaling) , physics , excited state , rabi frequency , exciton , materials science , condensed matter physics , quantum , laser , auger , optoelectronics , quantum mechanics , chemistry , biochemistry , demography , sociology
The decoherence of Rabi oscillation with multi-level processes in semiconductor quantum dots excited by laser pulses is investigated. By using population dynamic equations of multi-level system, the effect of three kinds of multi-level processes on the damping of Rabi oscillation in quantum dots are numerically simulated and discussed. The effect of biexciton can be neglected when the pulse width is larger than 5ps; the population leakage to wetting layer results in the decreasing of the amplitude and average of the population oscillation on the exciton ground state with the increasing of the excitation intensity; the effect of the two kinds of Auger capture processes on the Rabi oscillation and the spectral width of the photoluminescence from the exciton recombination are also discussed.