Open AccessPreparation of ZnMnO by ion implantation and its spectral characterization
Author(s) -
Hongmei Zhong,
Xiaoshuang Chen,
Jinbin Wang,
Chao Xia,
Shaowei Wang,
Zhifeng Li,
Xu Wu,
Wei Lü
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.2073
Subject(s) - photoluminescence , materials science , annealing (glass) , raman spectroscopy , ion implantation , impurity , ion , fabrication , semiconductor , spectral line , semiconductor materials , optoelectronics , optics , chemistry , physics , metallurgy , medicine , alternative medicine , organic chemistry , pathology , astronomy
This paper reports the fabrication of ZnMnO semiconductor by high-dose Mn impla ntion. We studied the influence of implantation dose and annealing on its optica l properties. The broad band at 575cm-1 in Raman spectrum is attribut ed to defects related to high-dose Mn implantion. The vibration modes at 528cm-1 are considered to be associated with Mn impurities. Room temperature photoluminescence spectra show that the high-dose Mn implantion can enhance the intensity in visible band.