Preparation of ZnMnO by ion implantation and its spectral characterization | Zendy

Zhong Hong-mei | Zendy; Xiaohong Chen | Zendy; Wang Jin-Bin | Zendy; Changsheng Xia | Zendy; Wang Shaowei | Zendy; Zhifeng Li | Zendy; XU WEN-LAN | Zendy; Wei Lü | Zendy

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Preparation of ZnMnO by ion implantation and its spectral characterization

Author(s) -

Zhong Hong-mei,

Xiaohong Chen,

Wang Jin-Bin,

Changsheng Xia,

Wang Shaowei,

Zhifeng Li,

XU WEN-LAN,

Wei Lü

Publication year - 2006

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.55.2073

Subject(s) - photoluminescence , materials science , annealing (glass) , raman spectroscopy , ion implantation , impurity , ion , fabrication , semiconductor , spectral line , semiconductor materials , optoelectronics , optics , chemistry , physics , metallurgy , medicine , alternative medicine , organic chemistry , pathology , astronomy

This paper reports the fabrication of ZnMnO semiconductor by high-dose Mn impla ntion. We studied the influence of implantation dose and annealing on its optica l properties. The broad band at 575cm-1 in Raman spectrum is attribut ed to defects related to high-dose Mn implantion. The vibration modes at 528cm-1 are considered to be associated with Mn impurities. Room temperature photoluminescence spectra show that the high-dose Mn implantion can enhance the intensity in visible band.

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