Open AccessExchange bias with perpendicular anisotropy in (Pt/Co)n/FeMn multilayers
Author(s) -
Zhai Zhong-Hai,
Teng Jiao,
Baohe Li,
Lijin Wang,
Yu Guanghua,
Zhu Feng-Wu
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.2064
Subject(s) - exchange bias , materials science , condensed matter physics , bilayer , perpendicular , sputter deposition , layer (electronics) , sputtering , anisotropy , biasing , magnetic anisotropy , nuclear magnetic resonance , thin film , physics , optics , chemistry , nanotechnology , magnetic field , magnetization , biochemistry , geometry , mathematics , quantum mechanics , membrane , voltage
In this paper, we report the observation of exchange bias in (Pt/Co)n /FeMn multilayer with perpendicular magnetic anisotropy. The samples were deposi ted on glass substrates by magnetron sputtering and capped with 2nm thick Pt lay er. Our results show that the relation between perpendicular exchange bias Hex of (Pt/Co)n/FeMn multilayers and the thickness of antiferro magnetic layer is similar to that in the case of in-plane exchange bias. He x is inversely proportional to the number of bilayer repeats. In the case of (Pt/Co)3/FeMn multilayers, perpendicular exchange bias Hex reachs 22.3kA/m. With insertion of 0.4nm Pt layer between Co layer and FeMn layer, Hex can reach 39.8kA/m.