Open AccessMemory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gate
Author(s) -
Hua Wang,
Ren Ming-fang
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.1512
Subject(s) - ferroelectricity , materials science , annealing (glass) , polarization (electrochemistry) , field effect transistor , hysteresis , transistor , semiconductor , optoelectronics , metal , condensed matter physics , voltage , composite material , electrical engineering , metallurgy , chemistry , dielectric , engineering , physics
Metal-ferroelectric-semiconductor field-effect-transistors (FFETs) with Ag/Bi4Ti3O12/p-Si gate were fabricated using the high q uality Bi4Ti3O12 on p-Si substrates prepared by Sol-Gel technique. The phase structure characteristics of Bi4Ti 3O12 films, the interface characteristics of ferroelectric/Si a nd the memory characteristics of the FFETs were investigated. Bi4Ti 3O12 films with high preferred c-axis-orientation are obta ined at appropriate annealing temperature which helps to improve the interface c haracteristics of ferroelectric/Si. The C-V hysteresis curves with clockwise loo ps prove that the FFETs could realize a memory effect due to the ferroelectric p olarization of Bi4Ti3O12 films, and the capacit ance decay of 11% in 16 hours indicates that the FFETs have good polarization ch arge retention. The counter-clockwise Ids-VG hysterisis cu rve of the FFETs demonstrates that the channel current is modulated by the ferro electric polarization of Bi4Ti3O12 films.