Open AccessEffect of excitation frequency on microcrystalline silicon materials prepared by VHF-PECVD
Author(s) -
Yachen Gao,
Xiaodan Zhang,
Ying Zhao,
Jian Sun,
Feng Zhu,
Changchun Wei
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.1497
Subject(s) - materials science , excitation , silane , plasma enhanced chemical vapor deposition , microcrystalline silicon , deposition (geology) , silicon , microcrystalline , analytical chemistry (journal) , chemical vapor deposition , optoelectronics , crystalline silicon , chemistry , amorphous silicon , crystallography , physics , composite material , paleontology , sediment , biology , chromatography , quantum mechanics
Hydrogenated microcrystalline silicon (μc-Si:H) materials was prepared by plasm a enhanced chemical vapor deposition (PECVD) at silane concentration 6% and 7% w ith changing excitation frequency (40—70MHz). Relationship between excitation f requency and electrical, structural characteristics and deposition rate of the m aterials was studied. The results indicate that the crystalline volume fraction (Xc) decrease firstly and then increase with the increase of excitati on frequency. But the photosensitivity and the deposition rate be have adversely with the change of excitation frequency. The reason of change of structure and deposition rate of thin films with excitation frequency was studied by optical e mission spectroscopy.