Open AccessGrowth and properties of the c-axis oriented Bi3.15Nd0.75 Ti3O12 ferroelectric multi-layer thin films on silicon substrates
Author(s) -
Shaozhen Li,
Meiya Li,
Xu Wen-Guang,
Jianhua Wei,
Zhao Xingzhong
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.1472
Subject(s) - materials science , ferroelectricity , thin film , scanning electron microscope , layer (electronics) , microstructure , deposition (geology) , heterojunction , silicon , morphology (biology) , diffraction , composite material , optics , optoelectronics , nanotechnology , dielectric , paleontology , genetics , physics , sediment , biology
The c-axis oriented Bi3.15Nd0.75Ti3O12(BNT) ferroelectric thin films were grown on Si(100) substrates by pulsed lase r deposition with La0.5Sr0.5CoO3/CeO2/Y0.18Zr0.91O2.01 multi-heterostructure as buf fer layer. X-ray diffraction and scanning electron microscopy were used to deter mine the microstructure, orientation and morphology of the multi-layer films. Th e influence of deposition temperatures and the partial oxygen pressure on the mi crostructure, orientation and morphology of the BNT films were investigated and the optimal deposition parameters were determined. The BNT multi-layer thin film s deposited under optimal condition have good electric properties. The C-V patte rn of the BNT multilayer thin films deposited under optimal deposition condition s has the typical butterfly-like shape, suggesting that the films have good pola rization-reversion storage properties. The correlation between the ferroelectric properties and the orientations of the BNT films is discussed.