Colossal magnetoresistance effect in the perovskite-type La1－xPrxMnO3 thin films | Zendy

Ping Duan | Zendy; Zhenghao Chen | Zendy; Dai Shou-Yu | Zendy; Zhou Yue-Liang | Zendy; Lü Hui-Bin | Zendy

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Colossal magnetoresistance effect in the perovskite-type La1－xPrxMnO3 thin films

Author(s) -

Ping Duan,

Zhenghao Chen,

Dai Shou-Yu,

Zhou Yue-Liang,

Lü Hui-Bin

Publication year - 2006

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.55.1441

Subject(s) - colossal magnetoresistance , magnetoresistance , materials science , thin film , epitaxy , pulsed laser deposition , perovskite (structure) , giant magnetoresistance , substrate (aquarium) , condensed matter physics , x ray photoelectron spectroscopy , oxide , magnetic field , nuclear magnetic resonance , nanotechnology , crystallography , physics , chemistry , metallurgy , quantum mechanics , oceanography , layer (electronics) , geology

The oxide La1-xPrxMnO3 (x=0.1, 0.2) thin film s howing colossal magnetoresistance has been epitaxially grown on (100) SrTiO 3 single-crystal substrate by pulsed-laser deposition. The films have a pe rovskite structure and perform the colossal magnetoresistance effect with the ma ximum magnetoresistance ratio of 95% under the magnetic field of 5 T. The valenc e of Pr is confirmed as +4 through XPS. Therefore the epitaxial film is most lik ely an electron-doped colossal magnetoresistance fihn.

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