Open AccessGrowth of p-GaN at low temperature and its properties as light emitting diodes
Author(s) -
Naixin Liu,
Huaibing Wang,
Jianping Liu,
Nanhui Niu,
Han Jun,
Shen Guang-di
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.1424
Subject(s) - materials science , sapphire , chemical vapor deposition , electrical resistivity and conductivity , diode , light emitting diode , optoelectronics , luminescence , metalorganic vapour phase epitaxy , metal , analytical chemistry (journal) , optics , nanotechnology , laser , epitaxy , chemistry , metallurgy , physics , electrical engineering , layer (electronics) , chromatography , engineering
The p-type GaN(p-GaN) samples grown at low temperature 870—980℃ on sapphire su bstrate were prepared by the metal organic chemical vapor deposition technique(M OCVD), and their electrical properties were investigated. The p-GaN samples grow n below 900℃ show high-resistivity, and samples grown at above 900℃ have good conductivity. In addition, the electrical properties are also related with the d oping level and the growth condition of p-GaN. The low N-Ga mole ratio leads to poor conductivity, the high ratio leads to rough morphology. At last, we use the optimized p-GaN to fabricate the green-light emitting diodes.We found that when the growth temperature is lower, the luminescence intensity and reverse voltage is higher but the forward voltage increases slightly.