Open AccessAn analytical model of MOSFET threshold voltage with considiring the quantum effects
Author(s) -
Yong Dai,
Junning Chen,
Daoming Ke,
Sun Jia-e
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.897
Subject(s) - threshold voltage , mosfet , voltage , physics , computational physics , quantum mechanics , transistor
Based on the improved approximation of modified triangular potential well, a phy sical_based model of MOSFETs threshold voltage is presented, as well as its anal ytical formulation. The new model takes quantum effects into account for future generation MOS devices and integration circuits. The calculated results by using the new model agree with the simulation results very well.