Open AccessCharacterization and bonding configuration of SiCOH low-k films
Author(s) -
Tingting Wang,
Chao Ye,
Ning Zhao-Yuan,
Cheng Shan-Hua
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.892
Subject(s) - materials science , dielectric , chemical vapor deposition , electron cyclotron resonance , analytical chemistry (journal) , thermal stability , fourier transform infrared spectroscopy , chemical bond , deposition (geology) , annealing (glass) , radical , ion , composite material , nanotechnology , chemical engineering , chemistry , organic chemistry , paleontology , optoelectronics , sediment , engineering , biology
Using decamethylcyclopentasioxane (Si(CH3)2O5 as liquid precursor, SiCOH films, which have low dielectric constant (low k), good insulating ability and thermal stability, were prepared by electron cyclotron resonance chemical vapor deposition (ECR_CVD). The FTIR spectra of the films were measured to find the difference of bond structures between SiCOH films and DM5 source. It was verified that the Si—O—Si cyclic structure was retained in SiCOH films,while _CH3 radicals were lost during the deposition. The dielectric con stant decreased from 385 to 285 after the film was annealed in 400℃. With t he analysis of the bond structure of the film as deposited and annealed, we can infer that the increased content of cage structure comprised of Si—O—Si bond w ith bigger bond angle may be the reason for decreased dielectric constant.