Open Access
Electron holography investigation on the barrier structures of Co based magnetic tunnel junctions
Author(s) -
Zhe Zhang,
Tao Zhu,
Feng Yu-Qing,
Ze Zhang
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.5861
Subject(s) - electron holography , quantum tunnelling , annealing (glass) , materials science , ferromagnetism , magnetoresistance , condensed matter physics , tunnel magnetoresistance , electron , holography , microstructure , rectangular potential barrier , electrode , optoelectronics , magnetic field , nanotechnology , optics , transmission electron microscopy , physics , composite material , quantum mechanics
The barrier potential profiles and microstructure of Co based magnetic tunnel junctions (MTJs) annealed up to 340℃ have been studied by electron holography (EH) and high resolution electron microscopy. The EH results reveal that the annealing process can well improve the quality of interfaces between barrier and ferromagnetic electrodes, and of AlOx barrier itself, which are responsible for the improvement of tunneling magnetoresistance in MTJs after anneal at 280℃.