Thermal stability of magnetic tunnel junctions investigated by x-ray photoelectron spectroscopy | Zendy

Feng Yu-Qing | Zendy; Kun Zhao | Zendy; Τao Zhu | Zendy; Wen-shan Zhan | Zendy

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Thermal stability of magnetic tunnel junctions investigated by x-ray photoelectron spectroscopy

Author(s) -

Feng Yu-Qing,

Kun Zhao,

Τao Zhu,

Wen-shan Zhan

Publication year - 2005

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.54.5372

Subject(s) - x ray photoelectron spectroscopy , antiferromagnetism , ferromagnetism , materials science , thermal stability , annealing (glass) , tunnel magnetoresistance , layer (electronics) , oxide , condensed matter physics , nuclear magnetic resonance , analytical chemistry (journal) , nanotechnology , chemistry , composite material , physics , metallurgy , organic chemistry , chromatography

We have studied the thermal stability of magnetic tunnel junctions with and without nano-oxide layer (NOL) using x-ray hpotoelectron spectroscopy (XPS). The con centration and chemical states of elements,in particular Mn,have been obtained b y angel-resolved XPS and peak decomposition technique.It is confirmed that Mn in the antiferromagnetic layer can diffuse into the pinned ferromagnetic layer and the insulating barrier layer when a magnetic tunnel junction without NOL is ann ealed at high temperature.However,the interdiffusion of Mn during the annealing process is suppressed by inserting a NOL between the antiferromagnetic and pinne d ferromagnetic layer,and then the thermal stability is improved.

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