Open AccessEffect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi
Author(s) -
Quan Hao,
Caichi Liu,
Wenfeng Sun,
Jianqiang Zhang,
Sheng Sun,
Linjie Zhao,
Jianfeng Zhang,
Qing Zhou,
Jing Wang
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.4863
Subject(s) - materials science , wafer , annealing (glass) , doping , void (composites) , silicon , oxygen , thermal , optoelectronics , analytical chemistry (journal) , composite material , thermodynamics , chemistry , physics , organic chemistry , chromatography
Flow pattern defects(FPDs) in as-grown and rapid thermal annealed heavily Sb-dop ed silicon wafers was investigated. The experimental results show that the dens ity of FPDs can be reduced after high temperature annealing, and H2 is the most effective annealing atmosphere. The mechanism of elimination of FPDs is also discussed from the relationship between heavily doping Sb and interstit ial oxygen concentration. The heavily doping Sb influences not only the distribu tion of initial oxygen concentration in CZSi wafer, but also the formation and h eat behavior of grown-in void defects.