Effect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi | Zendy

Qiuyan Hao | Zendy; Caichi Liu | Zendy; Weizhong Sun | Zendy; Jianqiang Zhang | Zendy; Shilong Sun | Zendy; Liwei Zhao | Zendy; Jianfeng Zhang | Zendy; Qigang Zhou | Zendy; Wang Jing | Zendy

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Effect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi

Author(s) -

Qiuyan Hao,

Caichi Liu,

Weizhong Sun,

Jianqiang Zhang,

Shilong Sun,

Liwei Zhao,

Jianfeng Zhang,

Qigang Zhou,

Wang Jing

Publication year - 2005

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.54.4863

Subject(s) - materials science , wafer , annealing (glass) , doping , void (composites) , silicon , oxygen , thermal , optoelectronics , analytical chemistry (journal) , composite material , thermodynamics , chemistry , physics , organic chemistry , chromatography

Flow pattern defects(FPDs) in as-grown and rapid thermal annealed heavily Sb-dop ed silicon wafers was investigated. The experimental results show that the dens ity of FPDs can be reduced after high temperature annealing, and H2 is the most effective annealing atmosphere. The mechanism of elimination of FPDs is also discussed from the relationship between heavily doping Sb and interstit ial oxygen concentration. The heavily doping Sb influences not only the distribu tion of initial oxygen concentration in CZSi wafer, but also the formation and h eat behavior of grown-in void defects.

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