Open AccessTemperature measurement from the Raman spectra of porous silicon
Author(s) -
Ying Bai,
Lan Yan-na,
Yujun Mo
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.4654
Subject(s) - raman spectroscopy , porous silicon , materials science , laser , silicon , spectral line , line (geometry) , temperature measurement , optics , porosity , power (physics) , optoelectronics , thermodynamics , physics , composite material , geometry , mathematics , astronomy
Raman spectra of porous silicon are obtained using 457.5nm laser line, from which some relations between peak parameters and laser powers are obtained. Our previous theoretical research demonstrated that the increase of laser power leads to the increase of local temperature, and this results in the shrink of local size which gives rise to the variation of a series of peak parameters. In this article we discuss and calculate in detail the influence of laser power on the local temperature of porous silicon, which set the experimental basis for the quantitative measurement of temperature utilizing Raman spectrum.