Open AccessA study of Raman and optical emission spectroscopy on microcrystalline silicon films deposited by VHF-PECVD
Author(s) -
Xiaodan Zhang,
Ying Zhao,
Feng Zhu,
Changchun Wei,
Congcong Wu,
Yachen Gao,
Guofu Hou,
Jian Sun,
Xin Geng,
Xiong Shao-Zhen
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.445
Subject(s) - plasma enhanced chemical vapor deposition , raman spectroscopy , materials science , silane , microcrystalline silicon , analytical chemistry (journal) , crystallinity , silicon nitride , microcrystalline , silicon , chemical vapor deposition , deposition (geology) , plasma , optics , crystalline silicon , optoelectronics , amorphous silicon , chemistry , paleontology , physics , chromatography , sediment , composite material , biology , crystallography , quantum mechanics
Structural properties of microcrystalline silicon films deposited by very high f requency plasma_enhanced chemical vapor deposition(VHF_PECVD) and on-line monit or were studied using Raman and optical emission spectroscopy. The results obta ined showed that the discharge power has a modulation function on crystalline volume fraction (χc) of materials. A larger silane concentration means a stronger modulation function. The intensity of SiH* peak can characterize the deposition rate in a certain range, however the higher power indicates the lower deposition rate, and the ratio of intensity Hα* to SiH* peak value reflects the extent of crystallinity which is consistent with the result obtained from Raman measurement. In addition, the ratio of IHβ * IHα* indicates the decrease of electronic temperatur e in hydrogen plasma with the increase of discharge power.