A study of Raman and optical emission spectroscopy on microcrystalline silicon films deposited by VHF-PECVD | Zendy

Xiaodan Zhang | Zendy; Ying Zhao | Zendy; Feng Zhu | Zendy; Wei Chang-Chun | Zendy; Chunya Wu | Zendy; Gao Yan-Tao | Zendy; Guofu Hou | Zendy; Jian Sun | Zendy; Ziyang Hu | Zendy; Xiong Shao-Zhen | Zendy

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A study of Raman and optical emission spectroscopy on microcrystalline silicon films deposited by VHF-PECVD

Author(s) -

Xiaodan Zhang,

Ying Zhao,

Feng Zhu,

Wei Chang-Chun,

Chunya Wu,

Gao Yan-Tao,

Guofu Hou,

Jian Sun,

Ziyang Hu,

Xiong Shao-Zhen

Publication year - 2005

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.54.445

Subject(s) - plasma enhanced chemical vapor deposition , raman spectroscopy , materials science , silane , microcrystalline silicon , analytical chemistry (journal) , crystallinity , silicon nitride , microcrystalline , silicon , chemical vapor deposition , deposition (geology) , plasma , optics , crystalline silicon , optoelectronics , amorphous silicon , chemistry , paleontology , physics , chromatography , sediment , composite material , biology , crystallography , quantum mechanics

Structural properties of microcrystalline silicon films deposited by very high f requency plasma_enhanced chemical vapor deposition(VHF_PECVD) and on-line monit or were studied using Raman and optical emission spectroscopy. The results obta ined showed that the discharge power has a modulation function on crystalline volume fraction (χc) of materials. A larger silane concentration means a stronger modulation function. The intensity of SiH* peak can characterize the deposition rate in a certain range, however the higher power indicates the lower deposition rate, and the ratio of intensity Hα* to SiH* peak value reflects the extent of crystallinity which is consistent with the result obtained from Raman measurement. In addition, the ratio of IHβ * IHα* indicates the decrease of electronic temperatur e in hydrogen plasma with the increase of discharge power.

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