Open AccessA method to estimate the strain state of SiGe/Si by measuring the bandgap
Author(s) -
Cheng Bu-Wen,
Fei Yao,
Chunlai Xue,
Jianguo Zhang,
Chuanbo Li,
Ruifeng Mao,
Zuo Yu-Hua,
Luo Liping,
Qiming Wang
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.4350
Subject(s) - materials science , band gap , strain (injury) , optoelectronics , state (computer science) , engineering physics , condensed matter physics , computer science , physics , medicine , algorithm
Using the result of model-solid theory,we have obtained the relationship between bandgap and strain of Si1-xGex alloy on Si(100) subs trate with x<085 . It was shown that the deviation between the bandgap of strained SiGe and relax ed SiGe is proportional to the strain. According to the theoretical result, a no vel method was suggested to determine the strain state of SiGe/Si through measur ing the bandgap. The strain in the SiGe/Si multi-quantum wells was measured using the new method and the results had good agreement with that from XRD measurement.