Open AccessConduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown
Author(s) -
Yangang Wang,
Xu Ming-Zhen,
Cheng Tan,
Xiaorong Duan
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.3884
Subject(s) - quantum tunnelling , mosfet , materials science , gate oxide , oxide , electron , condensed matter physics , thermal conduction , rectangular potential barrier , transistor , optoelectronics , voltage , physics , composite material , quantum mechanics , metallurgy
The conduction mechanism of ultra-thin gate oxide n-metal-oxide-semiconductor fi eld effect transistor (n-MOSFET) after soft breakdown is studied in this paper. It is found that in a certain range of gate voltage Vg, the gate cur r ent Ig follows the Fowler-Nordheim-like tunneling mechanism, and the experimen tal tunneling barrier b is 0936 eV in average, which is much smal ler t han the interface barrier of Si/SiO2 We think that after soft brea kdown, the electrons existing in the quantization energy levels of the Si/SiO2 interface , not directly tunnel to the oxide conduction band, but tunnel to the oxide defe ct band. b is determined by both the defect band energy level and t he qu antization energy level of the tunneling electrons. With rising experimental tem perature, the tunneling of high energy level electron is also increasing, which reduces b gradually.