Open AccessInfluence of interface dipoles on the UV/solar rejection ratios of GaN/AlGaN/GaN photodetectors
Author(s) -
Chunfu Zhang,
Yue Hao,
Hailong You,
Jinfeng Zhang,
Zhou Xiao-Wei
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.3810
Subject(s) - heterojunction , photodetector , dipole , optoelectronics , polarization (electrochemistry) , materials science , photodiode , physics , quantum mechanics , chemistry
In the inverted heterostructure photodiodes(IHPs), the strong polarization effect at the interface of the AlGaN/GaN heterostructure influences UV/Solar rejection ratios of this type of structure. In this paper, the total effect of polarization is divided into two parts: the polarization and dipole terms. Based on the model of GaN/AlGaN/GaN IHPs, the influence of dipoles on the UV/Solar rejection ratios is analyzed. The results show that when dipoles are considered, UV/Solar rejection ratios of photodetectors are about three orders of magnitude, which agree with the experiment of Tarsa. The influence of dipoles should be considered in the IHPs.