Open AccessThe light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture
Author(s) -
Zhu Zu-Song,
Xuelian Lin,
Yunpeng Yu,
Kaifeng Lin,
Qiu Gui-ming,
Huang Rui,
Chao Yu
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.3805
Subject(s) - materials science , polycrystalline silicon , silicon , crystallite , stability (learning theory) , engineering physics , chemical engineering , optoelectronics , nanotechnology , metallurgy , computer science , thin film transistor , physics , machine learning , engineering , layer (electronics)
We have studied the stability of amorphous silicon and polycrystalline silicon films under illumination. These films are prepared by plasma-enhanced chemical vapor deposition technology from SiH4/H2 and SiCl4/H2 separately. The exp eriment indicates that the light-soaking degradation phenomenon, which exists in almost all amorphous silicon films, does not appear in the polycrystalline sili con films. The light-dark conductivity of polycrystalline silicon films does not decrease but increase during light irradiation. Furthermore, the variance of co nductivity depends on hydrogen dilution ratio. It is suggested that the persiste nt photoconductivity effect of polycrystalline silicon films may originate from the high crystallinity and the action of chlorine.