Open AccessDesign and analysis of 1.3μm GaAs-based quantum dot vertical-cavity surface-emitting lasers
Author(s) -
Cunzhu Tong,
Zhichuan Niu,
Qin Han,
Rongchang Wu
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.3651
Subject(s) - quantum dot , quantum dot laser , optoelectronics , laser , materials science , wavelength , quantum well , gallium arsenide , vertical cavity surface emitting laser , stack (abstract data type) , semiconductor laser theory , optics , physics , semiconductor , computer science , programming language
A theoretical study on 13μm GaAs-based quantum dot vertical-cavity surface- emitting lasers (VCSELs) was made. Investigation of the influence of VCSELs on t he optical confinement factors and the optical loss and the calculation of the m aterial gain of the assembled InGaAs/GaAs quantum dots. Analysis of the threshol d characteristic was made and the multi-wavelength cavity and multilayer quantum_dot stack structure is found to be more suitable for quantum dot VCSELs.