Open AccessTwo-dimensional patterned nc-Si arrays prepared by the method of laser interference crystallization
Author(s) -
Zou He-Cheng,
Qibo Feng,
Wu Liang-Cai,
Xinfan Huang,
Xin Li,
Han Pei-Gao,
Zhongyuan Ma,
Wei Li,
Kunji Chen
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.3646
Subject(s) - materials science , crystallization , transmission electron microscopy , crystallite , layer (electronics) , silicon , chemical vapor deposition , laser , grating , polycrystalline silicon , optoelectronics , nanotechnology , optics , chemical engineering , thin film transistor , physics , engineering , metallurgy
The method of laser_induced crystallization combining with the phase-shifting grating mask (PSGM) was carried out to fabricate nanocrystal silicon (nc-Si) with the two-dimensional (2D) patterned distribution within a-SiNx/a- Si:H/ a-SiNx sandwiched structure grown on the SiO2/Si or fuse d quartz subst rate by plasma-enhanced chemical vapor deposition technique. The thicknesses of a-Si:H and a-SiNx layer are 10 and 50nm, respectively. The results of at omic force microscopy, cross-section transmission electron microscopy and high r esolution transmission electron microscopy show that the controllable crystalliz ed regions within the initial a-Si:H layer are selectively formed with a diamete r of about 250 nm and are patterned with the same 2D periodicity of 20 μm as that of the PSGM. Si nano-crystallitesthe size of which is almost the same as the thickness of the a-Si:H layer, are formed in the crystallized regions, and h ave preferred orientation.