Two-dimensional patterned nc-Si arrays prepared by the method of laser interference crystallization

The method of laser_induced crystallization combining with the phase-shifting grating mask (PSGM) was carried out to fabricate nanocrystal silicon (nc-Si) with the two-dimensional (2D) patterned distribution within a-SiNx/a- Si:H/ a-SiNx sandwiched structure grown on the SiO2/Si or fuse d quartz subst rate by plasma-enhanced chemical vapor deposition technique. The thicknesses of a-Si:H and a-SiNx layer are 10 and 50nm, respectively. The results of at omic force microscopy, cross-section transmission electron microscopy and high r esolution transmission electron microscopy show that the controllable crystalliz ed regions within the initial a-Si:H layer are selectively formed with a diamete r of about 250 nm and are patterned with the same 2D periodicity of 20 μm as that of the PSGM. Si nano-crystallitesthe size of which is almost the same as the thickness of the a-Si:H layer, are formed in the crystallized regions, and h ave preferred orientation.