Open AccessTransition films from amporphous to microcrystalline silicon and solar cells
Author(s) -
Huiying Hao,
Guanglin Kong,
Zeng Xiang-Bo,
Ying Xu,
Hongwei Diao,
Xin Liao
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.3327
Subject(s) - materials science , crystallinity , chemical vapor deposition , photoelectric effect , silicon , solar cell , microcrystalline , microcrystalline silicon , analytical chemistry (journal) , microstructure , plasma enhanced chemical vapor deposition , degradation (telecommunications) , chemical engineering , crystalline silicon , optoelectronics , composite material , crystallography , chemistry , amorphous silicon , engineering , telecommunications , chromatography , computer science
A series of hydrogenated silicon films near the threshold of crystallinity was p repared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PE CVD)from a mixture of SiH4 diluted in H2. The effect of h ydrogen di lution ratios R= H2/SiH4 on the microstructure o f the films was investigated. The photoelectronic properties and stability of the film s were studied as a function of crystalline fraction. The results show that t he diphasic films gain both the fine photoelectric properties like a-Si:H an d high stability like μc-Si:H. By using the diphasic silicon films as the intrinsic layer, p-i-n junction solar cells were prepared. Current-voltage (J-V) characteristics and stability of the solar cells were measured under an AM15 solar simulator. We observed a light-induced increase of 52% in the ope n-circuit voltage (Voc) and a light-induced degradation of 29% in efficiency.