Open AccessSimulation of step response of silane low-temperature pasma(1)
Author(s) -
Yang Jing,
Jingzhen Li,
Sun Xiu-quan,
Gong Xiang-Dong
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.3251
Subject(s) - plasma , torr , materials science , silane , transient (computer programming) , etching (microfabrication) , glow discharge , radio frequency , oscillation (cell signaling) , analytical chemistry (journal) , atomic physics , rf power amplifier , transient response , voltage , optoelectronics , chemistry , nanotechnology , physics , electrical engineering , thermodynamics , composite material , layer (electronics) , amplifier , biochemistry , engineering , cmos , quantum mechanics , chromatography , computer science , operating system
Understanding of the transient response of electronegative radio-frequency glow plasmas is important for process control, better selectivity etch technology and charge free etching. We have investigated the step responses of RF(1356MHz) silane gas plasmas at a pressure of 05 Torr(05×10333Pa). The result showed that, when the power voltage changed stepwise from 550V to 350V, a steady sta te pulsed plasma oscillation at a few kHz appeared. The transient behavior and o scillation were interpreted in terms of the transport and chemistry of charge ca rriers in the plasma.