Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy | Zendy

Xiaohua Xu | Zendy; Zhichuan Niu | Zendy; Ni Hai-Qiao | Zendy; Xu Yingqiang | Zendy; Wei Zhang | Zendy; Zhenghong He | Zendy; Han Qin | Zendy; Wu Rong-Han | Zendy; Jiang De-Sheng | Zendy

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Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy

Author(s) -

Xiaohua Xu,

Zhichuan Niu,

Ni Hai-Qiao,

Xu Yingqiang,

Wei Zhang,

Zhenghong He,

Han Qin,

Wu Rong-Han,

Jiang De-Sheng

Publication year - 2005

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.54.2950

Subject(s) - photoluminescence , molecular beam epitaxy , materials science , bilayer , optoelectronics , excitation , quantum well , luminescence , epitaxy , wavelength , optics , chemistry , nanotechnology , physics , laser , membrane , biochemistry , layer (electronics) , quantum mechanics

Photoluminescence study of (GaAs1-xSbx/InyG a1-yAs)/GaAs bilayer quantum wells (BQWs) grown by molecular beam epitaxy (MBE) were carried out. Temperature and excitation power dependent photoluminescence (PL) s tudy indicated that the band alignment of the BQWs is type - Ⅱ. The origin of the double-peak luminescence was discussed. Under optimized growth conditions, t he PL emission wavelength from the BQWs has been extend up to 131 μm with a s ingle peak at room temperature.

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