Open AccessPhotoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy
Author(s) -
Xiaoxing Xu,
Zhichuan Niu,
Haiqiao Ni,
Xu Yingqiang,
Wei Zhang,
Zhenghong He,
Han Qin,
Rongchang Wu,
Desheng Jiang
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.2950
Subject(s) - photoluminescence , molecular beam epitaxy , materials science , bilayer , optoelectronics , excitation , quantum well , luminescence , epitaxy , wavelength , optics , chemistry , nanotechnology , physics , laser , membrane , biochemistry , layer (electronics) , quantum mechanics
Photoluminescence study of (GaAs1-xSbx/InyG a1-yAs)/GaAs bilayer quantum wells (BQWs) grown by molecular beam epitaxy (MBE) were carried out. Temperature and excitation power dependent photoluminescence (PL) s tudy indicated that the band alignment of the BQWs is type - Ⅱ. The origin of the double-peak luminescence was discussed. Under optimized growth conditions, t he PL emission wavelength from the BQWs has been extend up to 131 μm with a s ingle peak at room temperature.