Open AccessAnalyses on high-temperature electrical properties of 4H-SiC n-MOSFET
Author(s) -
徐静平,
李春霞,
吴海平
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.2918
Subject(s) - materials science , mosfet , threshold voltage , electron mobility , voltage , electrical resistivity and conductivity , optoelectronics , engineering physics , condensed matter physics , transistor , electrical engineering , physics , engineering
High-temperature electrical properties of 4H-SiC n-MOSFET are simulated and anal yzed by considering changes of mobility and threshold voltage with temperature. The simulated results are in good agreement with experimental data. Further mor e, influences of main structural and technological parameters on high-temperatur e electrical properties of devices are discussed for obtaining optimum values o f these parameters.