Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET | Zendy

Xu Jing-Ping | Zendy; Chunxia Li | Zendy; Haiping Wu | Zendy

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Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET

Author(s) -

Xu Jing-Ping,

Chunxia Li,

Haiping Wu

Publication year - 2005

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.54.2918

Subject(s) - materials science , mosfet , threshold voltage , electron mobility , voltage , electrical resistivity and conductivity , optoelectronics , engineering physics , condensed matter physics , transistor , electrical engineering , physics , engineering

High-temperature electrical properties of 4H-SiC n-MOSFET are simulated and anal yzed by considering changes of mobility and threshold voltage with temperature. The simulated results are in good agreement with experimental data. Further mor e, influences of main structural and technological parameters on high-temperatur e electrical properties of devices are discussed for obtaining optimum values o f these parameters.

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