Open AccessEffect of proton implantation on photoluminescence of self-assembled InAs/GaAs quantum dots
Author(s) -
Tang Nai-Yun,
Yalin Ji,
Xiaoshuang Chen,
Lu Wei
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.2904
Subject(s) - materials science , photoluminescence , annealing (glass) , quantum dot , radiative transfer , ion implantation , proton , optoelectronics , atomic physics , molecular physics , chemistry , optics , physics , ion , organic chemistry , quantum mechanics , composite material
Both the effects of the intermixing induced by the implantation dose and the annealing temperature on the light-emission efficiency of the quantum dots are studied. The intensities of photoluminesce (PL) are determined by the carriers c apture time and non-radiative center lifetime.Annealing can partly eliminate the non-radiative center (NRC), so the NRC generation rate is a sublinear function of the proton dose (N). The carrier capture efficiency enhancement is induce d by intermixing and degradation by the implantation damage which mutually compe te, so there exists a critical implantation dose (NC). When N is less than NC, the intermixing is the main effect and the PL intensity increases with the implantation dose. On the other hand, when N is larger than N C, the implantation damge is so large that the intensity decreases wi th the do se. The higher the annealing temperature, the larger the NC becom es.