Aluminum-induced crystallization during deposition of silicon films by inductively coupled plasma CVD

Silicon thin films were deposited on Al-coated glass substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD) in SiH4/H2 mixtures at a low temperature of 350℃. The structure of the films was characterized by x-ray diffraction, x-ray photoelectron spectrum, atomic force microscopy and spectroscopic ellipsometry. It has been shown that the films are of a highly ordered structure with a strong (111) orientation. Grain size is larger than 300 nm. There is no residual Al in the films. Considering the high electron density in inductively coupled plasma, a preliminary interpretation is given for the mechanism of Al-induced crystallization during low-temperature deposition of Si films.