Open AccessAluminum-induced crystallization during deposition of silicon films by inductively coupled plasma CVD
Author(s) -
Xiaoqiang Wang,
Junshuai Li,
Qiang Chen,
Ji Qi,
Min Yin,
Deyan He
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.269
Subject(s) - inductively coupled plasma , materials science , crystallization , silicon , thin film , chemical vapor deposition , analytical chemistry (journal) , x ray photoelectron spectroscopy , deposition (geology) , ellipsometry , plasma enhanced chemical vapor deposition , plasma , chemical engineering , nanotechnology , chemistry , metallurgy , paleontology , physics , chromatography , quantum mechanics , sediment , engineering , biology
Silicon thin films were deposited on Al-coated glass substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD) in SiH4/H2 mixtures at a low temperature of 350℃. The structure of the films was characterized by x-ray diffraction, x-ray photoelectron spectrum, atomic force microscopy and spectroscopic ellipsometry. It has been shown that the films are of a highly ordered structure with a strong (111) orientation. Grain size is larger than 300 nm. There is no residual Al in the films. Considering the high electron density in inductively coupled plasma, a preliminary interpretation is given for the mechanism of Al-induced crystallization during low-temperature deposition of Si films.