Open AccessAMPS modeling of light J-V characteristics of a-Si based solar cells
Author(s) -
Hu Zhi-Hua,
Xin Liao,
Hongwei Diao,
Chengjie Xia,
Liang Xu,
Zeng Xiang-Bo,
Huiying Hao,
Guanglin Kong
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.2302
Subject(s) - microelectronics , materials science , photonics , metal , valence (chemistry) , optoelectronics , physics , quantum mechanics , metallurgy
AMPS (Analysis of microelectronic and photonic structures) mode,which was developed by Pennsylvania State University,has been used to module the light J_V c haracteristics of a_Si solar cells with a structure of TCO/p_a_SiC:H/i_a_Si:H/n_ a_Si:H/metal.The effects of valence band offset and contact barriers at p/i and TOC/p,n/metal interfaces on the light J_V characteristics have been examined .The modeling has qualitatively categorized and explained the non_ideal J_V behaviors (rollover,crossover,Voc shift,and rollunder) observed in a_Si based so lar cells.