AMPS modeling of light J-V characteristics of a-Si based solar cells | Zendy

Hu Zhi-Hua | Zendy; Xianbo Liao | Zendy; Hongwei Diao | Zendy; Chaofeng Xia | Zendy; Xu Ling | Zendy; Zeng Xiang-Bo | Zendy; Hao Hui-Ying | Zendy; Guanglin Kong | Zendy

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AMPS modeling of light J-V characteristics of a-Si based solar cells

Author(s) -

Hu Zhi-Hua,

Xianbo Liao,

Hongwei Diao,

Chaofeng Xia,

Xu Ling,

Zeng Xiang-Bo,

Hao Hui-Ying,

Guanglin Kong

Publication year - 2005

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.54.2302

Subject(s) - microelectronics , materials science , photonics , metal , valence (chemistry) , optoelectronics , physics , quantum mechanics , metallurgy

AMPS (Analysis of microelectronic and photonic structures) mode,which was developed by Pennsylvania State University,has been used to module the light J_V c haracteristics of a_Si solar cells with a structure of TCO/p_a_SiC:H/i_a_Si:H/n_ a_Si:H/metal.The effects of valence band offset and contact barriers at p/i and TOC/p,n/metal interfaces on the light J_V characteristics have been examined .The modeling has qualitatively categorized and explained the non_ideal J_V behaviors (rollover,crossover,Voc shift,and rollunder) observed in a_Si based so lar cells.

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