Open AccessLow frequency noise study on short wavelength HgCdTe photodiodes
Author(s) -
Yangcheng Huang,
Dafu Liu,
Jing Liang,
Haimei Gong
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.2261
Subject(s) - flicker noise , noise (video) , flicker , photodiode , physics , noise generator , shot noise , y factor , noise spectral density , materials science , infrasound , noise figure , noise temperature , dark current , optoelectronics , detector , optics , phase noise , acoustics , electrical engineering , amplifier , cmos , artificial intelligence , computer science , image (mathematics) , engineering
The current-voltage characteristics and the low frequency noise measured at 255 —293K are reported. The figures of merit increase from 45×103 t o 7×104Ωcm2 as the temperatures decreases. At low fre quencies the noise mainly cons ists of flicker noise and generation recombination (g-r) noise, while at high fr equencies thermal noise is the dominant component. The flicker noise current is proportional to the detector current at reverse bias, and the Hooge parameter αH of the device is (3—7)×10-4. In addition, the fluc tuation time co nstant τ of the g-r noise is extracted by fitting the curve of the low_freq uency noise. Therefore, the trap thermal activation energy of the deep level is obtained from the relation between τ and temperature.