Open AccessThe improvement of thermal stability in NiSi film by adding Mo
Author(s) -
Huang Wei,
Lichun Zhang,
Yong Gao,
Jin Huang
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.2252
Subject(s) - silicide , materials science , thermal stability , annealing (glass) , sheet resistance , atmospheric temperature range , nickel , diffraction , diode , analytical chemistry (journal) , optoelectronics , silicon , composite material , metallurgy , thermodynamics , chemical engineering , optics , chemistry , physics , layer (electronics) , chromatography , engineering
A novel silicide technology to improve the thermal stability of the conventional Ni silicide is studied by adding a small quantity of Mo element in Ni flim.The results show that during rapid thermal annealing (RTA) temperature from 650 to 800℃,sheet resistance of Ni(Mo)Si silicide formed is low,whose value is about 2.4(Ω/□).X_ray diffraction(XRD) analysis identifies the existance of NiSi phase and no peak of NiSi2 phase for the above samples.Furthermore,accordin g to the theory on Gibbs free enery,the results show that adding 5.9 atomic% of Mo element can enhance thermal stability of nickel monosilicide.Finally,after annealed at temperatures ranging from 650 to 800℃,Ni(Mo)Si/Si Schottky barrier diodes(SBDs ) are fabricated.Good I_V characteristics of SBD that the range of Schotty b arrier height is from 0.64 to 0.66eV and the ideal factor is close to unity are shown.This further proves that the addition of a little amount of Mo in Ni film can improve the thermal stability of the NiSi film.