
Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
Author(s) -
Yao Wei,
Qiu Zhi-Jun,
Gui Yong-Sheng,
Zheng Ze-Wei,
Jie Lü,
Ning Tang,
Bo Shen,
Chu Jun-Hao
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.2247
Subject(s) - heterojunction , condensed matter physics , magnetoresistance , doping , materials science , modulation (music) , scattering , magnetic field , range (aeronautics) , physics , optics , quantum mechanics , acoustics , composite material
Magneto-transport measurements have been carried out on a Si modulation-doped Al 022Ga078N/GaN heterostructure in a temperature range between 1 5 and 25 K under magnetic field up to 10T. Striking beating patterns in magnetor esistance vs magnetic field are observed in the vicinity of a specific temperatu re. Theoretical simulation is performed and the comparison between numerical sim ulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator o f first subband.