Open AccessRealization and output characteristics analysis of the multiple islands single- electron transistors
Author(s) -
Ronghui Guo,
Zhao Zhang,
Yue Hao,
Yu-Gui Liu,
Yibin Wu,
Lyu Miao
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.1804
Subject(s) - coulomb blockade , transistor , quantum tunnelling , realization (probability) , quantum dot , indium , materials science , electrode , optoelectronics , electron , voltage , condensed matter physics , physics , quantum mechanics , statistics , mathematics
In this paper, a new kind of multiple islands single-electron transistor is prepared successfully with indium quantum dots deposited among nanometer-gap electrodes. The output characteristics are tested and the Coulomb blockade effects are observed. As a result, the harmful co-tunneling effects occurring usually in the single island single-electron transistors are weakened significantly, and a big threshold voltage is got. At the end of the paper, the different transport states from source to drain are discussed.