Open AccessInvestigation of the acceptor and donor in fast neutron irradiated Czochralski s ilicon
Author(s) -
Yangxian Li,
Shihe Yang,
Guifeng Chen,
Qing Ma,
Pingjuan Niu,
Dongfeng Chen,
Hongtao Li,
Baoyi Wang
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.1783
Subject(s) - annealing (glass) , irradiation , acceptor , materials science , analytical chemistry (journal) , positron annihilation spectroscopy , hall effect , electron mobility , annihilation , electrical resistivity and conductivity , nuclear chemistry , optoelectronics , positron annihilation , chemistry , electron , condensed matter physics , physics , nuclear physics , positron , chromatography , quantum mechanics , composite material
Variations of the irradiated defects, resistivity, carrier mobility ratio and ca rrier concentration in high-dose neutron-irradiated n-type Czochralski silico n have been investigated by means of Fourier transform infrared spectrometer, po sitron annihilation spectroscopy and Hall effect. After irradiated with fast neu tron, the sample transformed from n to p-type. Two types of acceptor centers th at contribute to the V22O22, V22O, VO22, V-O-V and V 44-type defects will appear after annealing at temperature of 450 a nd 600 ℃, respectively. After annealing at temperatures above 650℃, with the elimin ation of acceptors, the carrier mobility ratio and the carrier-type began to re cover and a type of donor related to the irradiated defects will appear. The eff ective annealing temperature is 750℃ at which the donor is formed, and anneal ing above 900℃ for 1h will eliminate the donor.