Open AccessPreparation and properties of nano-structure Cu33N thin films
Author(s) -
Wu Zhi-Guo,
Wei Wei Zhang,
Bai Li-Feng,
Jun Wang,
Yan Pengxun
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.1687
Subject(s) - thin film , materials science , electrical resistivity and conductivity , x ray photoelectron spectroscopy , analytical chemistry (journal) , nitride , sputter deposition , crystal structure , copper , band gap , nano , sputtering , composite material , crystallography , layer (electronics) , nanotechnology , nuclear magnetic resonance , optoelectronics , chemistry , metallurgy , physics , chromatography , electrical engineering , engineering
Copper nitride(Cu33N) thin films with nano-crystalline were deposite d on glass substrates at a temperature of 100℃ by DC magnetron sputtering with a columnar target. The structure of the Cu33N thin films was characterized by x-ray diffraction, x-ray photoelectron spectroscopy and atomic force microsco py. The results indicate that Cu33N thin films are composed of nanome ter grains with a cu bic crystal structure of anti-ReO33 type. The films have a uniform s mooth surf ace with only a roughness(Raa) of 17nm. The binding energy peaks of Cu2 p3/23/2, Cu2p1/21/2 and N1s were at 9327, 9527 and 3999eV respecti vely, and spin-orbit coupling energy gap of Cu2p was 20eV. The film thickness was determined by a profile step scanner, and its resistivity was measured usin g the four-probe method. The deposition rate and resistivity were found to chan ge with the nitrogen content.