Open AccessInfluence of the ambient pressure of Ar on the average size of Si nanoparticles deposited by pulsed laser ablation
Author(s) -
Yinglong Wang,
Zhou Yang,
Chu Li-Zhi,
Guangsheng Fu,
Ying Peng
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.1683
Subject(s) - materials science , ablation , laser ablation , nanoparticle , pulsed laser , ambient pressure , laser , optoelectronics , analytical chemistry (journal) , optics , nanotechnology , thermodynamics , cardiology , chemistry , environmental chemistry , physics , medicine
The nanocrystalline silicon films were prepared by pulsed laser ablation at the ambient pressures from 1 to 500 Pa of pure Ar gas. The x-ray diffraction spectrum indicates that the films are nanocrystalline, i.e. they are composed of Si nanoparticles. Scanning electron microscopy shows that with increasing gas pressur e, the average size of Si nanoparticles first increases and reaches its maximum (20nm) at 100Pa, and then decreases. The dynamics are analysed theoretically to explain the phenomenon. Furthermore, our result is compared with that in He gas.